3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers
We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of second...
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| Veröffentlicht in: | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) 2017-05, Vol.897, p.1-1 |
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| container_title | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
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| creator | Schuh, P. Litrico, G. La Via, F. Mauceri, M. Wellmann, P.J. |
| description | We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.897.15 |
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| subjects | 3C-SiC Chemical vapor deposition cubic SiC Epitaxial growth epitaxy Grain boundaries Inclusions MOSFET Organic chemistry Polytypes Silicon Silicon carbide Sublimation sublimation growth Substrates |
| title | 3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers |
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