3C-SiC bulk sublimation growth on CVD hetero-epitaxial seeding layers

We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of second...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) 2017-05, Vol.897, p.1-1
Hauptverfasser:	Schuh, P., Litrico, G., La Via, F., Mauceri, M., Wellmann, P.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	3C-SiC Chemical vapor deposition cubic SiC Epitaxial growth epitaxy Grain boundaries Inclusions MOSFET Organic chemistry Polytypes Silicon Silicon carbide Sublimation sublimation growth Substrates
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We report on the growth of bulk 3C-SiC by sublimation on epitaxial seeding layers (3CSiC/Si) from chemical vapor deposition. We have reached a materials thickness of 0.85 mm and an area of 10.5 cm 2 which can be enlarged further. The high crystalline quality is characterized by the absence of secondary polytype inclusions and the absence double position grain boundaries.
ISSN:	1662-9752 0255-5476 1662-9752
DOI:	10.4028/www.scientific.net/MSF.897.15