Gate oxide damage reduction and antenna yield improvement using low temperature preclean for sub-0.25 /spl mu/m metallization

Gate oxide damage reduction and antenna yield improvement using low temperature preclean for sub-0.25 /spl mu/m metallization

This article describes a new generation of low temperature argon (Ar) sputtering preclean. A ceramic electrostatic chuck (E-Chuck) was integrated to provide active wafer cooling. Wafer temperature, which is critical to gate oxide degradation in a plasma ion bombardment and charging environment, was...

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Hauptverfasser: Li, X., Hausmann, G., Subramani, M., Ngan, K., Yee, N., Chen, J., Parkhe, V., Stimson, B., Narasimhan, M., Chen, F., Young, D., Wood, J., Masterson, S., Abdul-Ridha, H., Cadieux, C., Brongo, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
Ceramics
Cooling
Degradation
Land surface temperature
Plasma accelerators
Plasma applications
Plasma sources
Plasma temperature
Sputtering
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Beschreibung
Zusammenfassung:This article describes a new generation of low temperature argon (Ar) sputtering preclean. A ceramic electrostatic chuck (E-Chuck) was integrated to provide active wafer cooling. Wafer temperature, which is critical to gate oxide degradation in a plasma ion bombardment and charging environment, was reduced from 250/spl deg/C to 75/spl deg/C. This significantly improved the antenna yield due to reduced gate oxide damage and achieved the same etch performance.
DOI:10.1109/IITC.1999.787100