Post etch cleaning of dual damascene system integrating copper and SiLK/sup TM

Post etch cleaning of dual damascene system integrating copper and SiLK/sup TM

This work presents an approach to the cleaning process for the integration of copper and SiLK/sup TM/ in a dual damascene structure. This paper addresses some problems of post etch residue removal and copper contamination, as well as a wet only process for resist removal with exposed SiLK/sup TM/.

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Bibliographische Detailangaben
Hauptverfasser: Louis, D., Peyne, C., Arvet, C., Lajoinie, E., Maloney, D., Lee, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical technology
Cleaning
Contamination
Copper
Dielectrics
Hafnium
Lithography
Plasma applications
Resists
Wet etching
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Beschreibung
Zusammenfassung:This work presents an approach to the cleaning process for the integration of copper and SiLK/sup TM/ in a dual damascene structure. This paper addresses some problems of post etch residue removal and copper contamination, as well as a wet only process for resist removal with exposed SiLK/sup TM/.
DOI:10.1109/IITC.1999.787091