A multilevel analog storage memory using source-side injection flash array

A multilevel analog storage memory using source-side injection flash array

A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode...

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Bibliographische Detailangaben
Hauptverfasser: Chun-Mai Liu, Brennan, J., Ping Guo, Holzmann, P., Klinger, P., Kordesch, A.V., Ming Kwan, I-Sheng Liu, Ken Su, Chih-Hsin Wang, Hai Wang, Sukyoon Yoon
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analog memory
Array signal processing
Costs
Current measurement
EPROM
Flash memory
Nonvolatile memory
Robustness
Signal resolution
Threshold voltage
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Beschreibung
Zusammenfassung:A multilevel storage technology with resolution approaching 8-bits is developed for storing analog signals directly into a memory array of source-side injection flash EEPROM. This is achieved by devising a read and programming scheme, by optimizing a memory cell layout, and by integrating mixed-mode capabilities into the base digital flash process.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.1999.786031