New generation CMP equipment and its Impact on IC devices

This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device f...

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Bibliographische Detailangaben
1. Verfasser: Jin, R.R.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:This paper will receive and report advancements in new generation CMP equipment (MIRRA(R)) development for different CMP applications in IC fabrication: SOI, silicon/polysilicon, shallow trench isolation (STI), oxide (PMD and ILD), W, Cu, Al. The impact of new generation CMP equipment on IC device fabrication and its performance is also discussed.
DOI:10.1109/ICSICT.1998.785815