Monolithic millimeter-wave balanced bi-phase amplitude modulator in GaAs/InGaP HBT technology

Monolithic millimeter-wave balanced bi-phase amplitude modulator in GaAs/InGaP HBT technology

The design and performance of a monolithic 38 GHz balanced reflection-type direct carrier modulator in HBT technology is described. The circuit uses cold-HBTs as variable resistance reflection terminations. With a calibrated biasing technique, the circuit achieves /spl plusmn/0.1 dB amplitude error...

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Bibliographische Detailangaben
Hauptverfasser: Nam, S., Shala, N., Ang, K.S., Ashtiani, A.E., Gokdemir, T., Robertson, I.D., Marsh, S.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Amplitude modulation
Attenuators
Capacitance measurement
Electrical resistance measurement
Gallium arsenide
Heterojunction bipolar transistors
Insertion loss
Millimeter wave technology
PHEMTs
Voltage
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Beschreibung
Zusammenfassung:The design and performance of a monolithic 38 GHz balanced reflection-type direct carrier modulator in HBT technology is described. The circuit uses cold-HBTs as variable resistance reflection terminations. With a calibrated biasing technique, the circuit achieves /spl plusmn/0.1 dB amplitude error and /spl plusmn/1.5/spl deg/ phase error.
ISSN:0149-645X
DOI:10.1109/MWSYM.1999.779466