A 50 GHz SiGe HBT push-push oscillator

A 50 GHz SiGe HBT push-push oscillator

We present a 50 GHz push-push oscillator fabricated in thin film technology on an alumina substrate using silicon-germanium HBTs. Output power of the oscillator is -5.6 dBm with a suppression of the fundamental and the second harmonic signal of -40 dBc and -38 dBc, respectively. Measured phase noise...

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Hauptverfasser: Sinnesbichler, F.X., Geltinger, H., Olbrich, G.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Frequency measurement
Germanium silicon alloys
Heterojunction bipolar transistors
Noise measurement
Oscillators
Power generation
Power system harmonics
Semiconductor thin films
Silicon germanium
Substrates
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Beschreibung
Zusammenfassung:We present a 50 GHz push-push oscillator fabricated in thin film technology on an alumina substrate using silicon-germanium HBTs. Output power of the oscillator is -5.6 dBm with a suppression of the fundamental and the second harmonic signal of -40 dBc and -38 dBc, respectively. Measured phase noise of the oscillator is -98 dBc at an offset frequency of 1 MHz.
ISSN:0149-645X
DOI:10.1109/MWSYM.1999.779413