Experimental Demonstration of SBG Semiconductor Laser With Controlled Phase Shift
We designed and experimentally demonstrated a sampled Bragg grating semiconductor laser with a controllable phase shift. The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of...
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| Veröffentlicht in: | IEEE photonics technology letters 2017-01, Vol.29 (1), p.126-129 |
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| container_end_page | 129 |
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| container_issue | 1 |
| container_start_page | 126 |
| container_title | IEEE photonics technology letters |
| container_volume | 29 |
| creator | Guo, Renjia Zhou, Yating Xiao, Hong Mao, Rui Shen, Yuqiao Shi, Yuechun Chen, Xiangfei |
| description | We designed and experimentally demonstrated a sampled Bragg grating semiconductor laser with a controllable phase shift. The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of which side mode suppression ratio (SMSR) is even up to 61.1 dB. Under the constant total current of 150 mA, the lasing wavelength can be continuously tuned about 1.1 nm and the SMSR keeps above 40 dB, while the output fluctuates slightly. This laser can be used to design and fabricate multiwavelength laser array for photonic integrated circuits. |
| doi_str_mv | 10.1109/LPT.2016.2628816 |
| format | Article |
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The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of which side mode suppression ratio (SMSR) is even up to 61.1 dB. Under the constant total current of 150 mA, the lasing wavelength can be continuously tuned about 1.1 nm and the SMSR keeps above 40 dB, while the output fluctuates slightly. 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The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of which side mode suppression ratio (SMSR) is even up to 61.1 dB. Under the constant total current of 150 mA, the lasing wavelength can be continuously tuned about 1.1 nm and the SMSR keeps above 40 dB, while the output fluctuates slightly. This laser can be used to design and fabricate multiwavelength laser array for photonic integrated circuits.</description><subject>controllable phase shift</subject><subject>Laser modes</subject><subject>Laser tuning</subject><subject>Optical device fabrication</subject><subject>sampled Bragg grating</subject><subject>Semiconductor laser</subject><subject>Semiconductor laser arrays</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE9LAzEUxIMoWKt3wUu-wNa8JJs_R621CgtWWvG4ZLNZurLdlCSCfntTWjzNMLwZeD-EboHMAIi-r1abGSUgZlRQpUCcoQloDgUByc-zJ9kDsPISXcX4RQjwkvEJel_87F3od25MZsBPbufHmIJJvR-x7_D6cYnXbtdbP7bfNvmAKxNdwJ992uK5H1Pww-BavNrmGK-3fZeu0UVnhuhuTjpFH8-LzfylqN6Wr_OHqrBUsFRYaGnXSGUllUJRzWjTEsUbTk0nW0YMoVoqpkxJSmdkAwyksUYL2wqtiGZTRI67NvgYg-vqff7DhN8aSH1AUmck9QFJfUKSK3fHSu-c-z-XknORB_8AgxNc4A</recordid><startdate>20170101</startdate><enddate>20170101</enddate><creator>Guo, Renjia</creator><creator>Zhou, Yating</creator><creator>Xiao, Hong</creator><creator>Mao, Rui</creator><creator>Shen, Yuqiao</creator><creator>Shi, Yuechun</creator><creator>Chen, Xiangfei</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-6044-1885</orcidid><orcidid>https://orcid.org/0000-0002-1439-1853</orcidid></search><sort><creationdate>20170101</creationdate><title>Experimental Demonstration of SBG Semiconductor Laser With Controlled Phase Shift</title><author>Guo, Renjia ; Zhou, Yating ; Xiao, Hong ; Mao, Rui ; Shen, Yuqiao ; Shi, Yuechun ; Chen, Xiangfei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-c1d2fb78c727682932bd084b42af7d30a0297838a505ea7b1317aca96cd698093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>controllable phase shift</topic><topic>Laser modes</topic><topic>Laser tuning</topic><topic>Optical device fabrication</topic><topic>sampled Bragg grating</topic><topic>Semiconductor laser</topic><topic>Semiconductor laser arrays</topic><toplevel>online_resources</toplevel><creatorcontrib>Guo, Renjia</creatorcontrib><creatorcontrib>Zhou, Yating</creatorcontrib><creatorcontrib>Xiao, Hong</creatorcontrib><creatorcontrib>Mao, Rui</creatorcontrib><creatorcontrib>Shen, Yuqiao</creatorcontrib><creatorcontrib>Shi, Yuechun</creatorcontrib><creatorcontrib>Chen, Xiangfei</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guo, Renjia</au><au>Zhou, Yating</au><au>Xiao, Hong</au><au>Mao, Rui</au><au>Shen, Yuqiao</au><au>Shi, Yuechun</au><au>Chen, Xiangfei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Demonstration of SBG Semiconductor Laser With Controlled Phase Shift</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2017-01-01</date><risdate>2017</risdate><volume>29</volume><issue>1</issue><spage>126</spage><epage>129</epage><pages>126-129</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We designed and experimentally demonstrated a sampled Bragg grating semiconductor laser with a controllable phase shift. The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of which side mode suppression ratio (SMSR) is even up to 61.1 dB. Under the constant total current of 150 mA, the lasing wavelength can be continuously tuned about 1.1 nm and the SMSR keeps above 40 dB, while the output fluctuates slightly. This laser can be used to design and fabricate multiwavelength laser array for photonic integrated circuits.</abstract><pub>IEEE</pub><doi>10.1109/LPT.2016.2628816</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-6044-1885</orcidid><orcidid>https://orcid.org/0000-0002-1439-1853</orcidid></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | controllable phase shift Laser modes Laser tuning Optical device fabrication sampled Bragg grating Semiconductor laser Semiconductor laser arrays |
| title | Experimental Demonstration of SBG Semiconductor Laser With Controlled Phase Shift |
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