Experimental Demonstration of SBG Semiconductor Laser With Controlled Phase Shift

We designed and experimentally demonstrated a sampled Bragg grating semiconductor laser with a controllable phase shift. The experimental results indicate that the introduced phase shift can be controlled by tuning injection current. The studied laser has good single longitudinal mode performance of which side mode suppression ratio (SMSR) is even up to 61.1 dB. Under the constant total current of 150 mA, the lasing wavelength can be continuously tuned about 1.1 nm and the SMSR keeps above 40 dB, while the output fluctuates slightly. This laser can be used to design and fabricate multiwavelength laser array for photonic integrated circuits.