V2O5 MISFETs on H-Terminated Diamond

We report for the first time on the dc and RF performance of novel MISFETs fabricated on hydrogen-terminated (H-terminated) single crystal diamond film using vanadium pentoxide (V 2 O 5 ) as insulating material. The active devices were characterized in terms of static I-V characteristics and static transconductance as well as of S-parameters for the calculation of the maximum cutoff frequency and the maximum oscillation frequency. Time stability of the drain current was evaluated overnight observing a maximum fluctuation of 7%. Investigations on temperature dependence of diamond-based MISFET were also performed up to 130°C. The experimental results were compared with the better established diamond MESFET technology. Finally, the surface transfer doping of H-terminated diamond by very thin V 2 O 5 insulator was also investigated in terms of conductivity, stability in air, and resistance to high temperatures.