Properties and defects study on GaAs based epitaxy materials

This paper presents the R&D of GaAs-based heterojunction materials, describes mainly the material properties and the characterization techniques. The microwave device has been fabricated with the as-grown structure material and the testing frequency which has entered into W-band has shown.

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Bibliographische Detailangaben
Hauptverfasser:	Cui Liqi, Wenjun Zhang, Ronggui Zhang, Li Xiaobai
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Epitaxial growth Frequency Gallium arsenide HEMTs Heterojunctions MODFETs Molecular beam epitaxial growth Ohmic contacts Research and development Superlattices
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Beschreibung
Zusammenfassung:	This paper presents the R&D of GaAs-based heterojunction materials, describes mainly the material properties and the characterization techniques. The microwave device has been fabricated with the as-grown structure material and the testing frequency which has entered into W-band has shown.
DOI:	10.1109/ICMMT.1998.768387