Model of quasi-vertical planar anti-parallel Schottky diode

A model of Quasi-Vertical planar Anti-parallel Schottky Diode (QVPAPD) is developed by using electromagnetic (EM) analyses of the diode structure. The mounting structure of the diode is taken into account. The model is used in the design of a 220 GHz subharmonic mixer with the QVPAPD. A preliminary...

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Bibliographische Detailangaben
Hauptverfasser:	Jian Zhang, Piironen, P.V., Mottonen, V.S., Louhi, J.T., Lehto, A.O., Simon, A., Lin, C.-I., Raisanen, A.V.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Conducting materials Electromagnetic analysis Equivalent circuits Finite element methods Frequency Microstrip Passivation Schottky diodes Substrates Wideband
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Beschreibung
Zusammenfassung:	A model of Quasi-Vertical planar Anti-parallel Schottky Diode (QVPAPD) is developed by using electromagnetic (EM) analyses of the diode structure. The mounting structure of the diode is taken into account. The model is used in the design of a 220 GHz subharmonic mixer with the QVPAPD. A preliminary experimental result is given.
DOI:	10.1109/ICMMT.1998.768245