A GaN UV Light Emitting Diode

A GaN UV Light Emitting Diode

In our studies, p-n junction LEDs were grown by MOCVD on (0001) sapphire substrates. The vertical MOCVD reactor has separate inlets for ammonia (NH 3 ) and the metalorganics. The system held a pressure of 76 Torr with a constant hydrogen flow of 1.9 l/min. Source materials for this reactor included...

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Bibliographische Detailangaben
Hauptverfasser: Akinwande, A.I., Goldenberg, B.L., Horning, R.D., King, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Chemical technology
Conducting materials
Contact resistance
Gallium nitride
Inductors
Light emitting diodes
MOCVD
P-n junctions
Temperature
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Beschreibung
Zusammenfassung:In our studies, p-n junction LEDs were grown by MOCVD on (0001) sapphire substrates. The vertical MOCVD reactor has separate inlets for ammonia (NH 3 ) and the metalorganics. The system held a pressure of 76 Torr with a constant hydrogen flow of 1.9 l/min. Source materials for this reactor included triethylaluminum (TEA), triethylgallium (TEG), bismethylcyclopentadienyl magnesium (MCp 2 Mg) and silane (SiH 4 .
DOI:10.1109/LEOSST.1995.763984