Thermal-emitting diodes for IR

Thermal-emitting diodes for IR

The use of a barrier principle for creation of nonequilibrium carriers in the active layer of the light source (injection of electron-hole pairs into the p-n junction at a forward bias) to generate a longer-wave IR recombination emission is prevented by fundamental physical restrictions.

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Bibliographische Detailangaben
Hauptverfasser: Malyutenko, V.K., Liptuga, A.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Circuits
Frequency
Light sources
Optical devices
P-n junctions
Photonic band gap
Radiative recombination
Semiconductor diodes
Stimulated emission
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Beschreibung
Zusammenfassung:The use of a barrier principle for creation of nonequilibrium carriers in the active layer of the light source (injection of electron-hole pairs into the p-n junction at a forward bias) to generate a longer-wave IR recombination emission is prevented by fundamental physical restrictions.
DOI:10.1109/ICMWFT.1989.763916