Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration

A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomor...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ralston, J.D., Weisser, S., Esquivias, I., Gallagher, D.F.G., Tasker, P.J., Rosenzweig, J., Fleissner, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bandwidth Diode lasers Driver circuits Gallium arsenide MODFET circuits Monolithic integrated circuits Optical design Optical receivers Quantum cascade lasers Quantum well devices
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