Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration

Comparison of vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW Diode Lasers Designed for Monolithic Integration

A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomor...

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Hauptverfasser: Ralston, J.D., Weisser, S., Esquivias, I., Gallagher, D.F.G., Tasker, P.J., Rosenzweig, J., Fleissner, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Diode lasers
Driver circuits
Gallium arsenide
MODFET circuits
Monolithic integrated circuits
Optical design
Optical receivers
Quantum cascade lasers
Quantum well devices
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Zusammenfassung:A detailed comparison is presented between vertically-compact high-speed GaAs and In/sub 0.35/Ga/sub 0.65/As MQW diode laser structures suitable for integration with MODFET driver circuits. Both devices show superior performance, although the advantages of replacing the GaAs QW's with pseudomorphic InGaAs QW's are clearly demonstrated.
DOI:10.1109/ISLC.1992.763626