The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasers

The effect of strain on auger recomhination and temperature sensitivity in 1.5/spl mu/m quantum well lasers

The reduction of Auger recombination, intervalence band absorption and transparency carrier density in strained 1.5 /spl mu/m lasers has been experimentally verified and the explanation for the still poor temperature sensitivity has been found.

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Bibliographische Detailangaben
Hauptverfasser: Zou, Y., Osinski, J.S., Grodzinski, P., Dapkus, P.D., Rideout, W., Sharfin, W.F., Crawford, F.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Capacitive sensors
Charge carrier density
Density measurement
Laser transitions
Lattices
Quantum well devices
Quantum well lasers
Radiative recombination
Temperature sensors
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Beschreibung
Zusammenfassung:The reduction of Auger recombination, intervalence band absorption and transparency carrier density in strained 1.5 /spl mu/m lasers has been experimentally verified and the explanation for the still poor temperature sensitivity has been found.
DOI:10.1109/ISLC.1992.763553