Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

We investigate the hot-carrier degradation of large angle tilted implementation drain n-MOSFETs (LATID-n-MOSFETs) using specific stress techniques related to the operating conditions of analog CMOS applications. Under these conditions, we find a hot-carrier induced damage proportional to the inverse...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Thewes, R., Walter, G.H., Brederlow, R., Schlunder, C., von Schwerin, A., Jurk, R., Linnenbank, C.G., Lengauer, G., Schmitt-Landsiedel, D., Weber, W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analog circuits Circuit noise Degradation Hot carriers MOSFET circuits Security Shape Signal design Stress Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!