Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation

We investigate the hot-carrier degradation of large angle tilted implementation drain n-MOSFETs (LATID-n-MOSFETs) using specific stress techniques related to the operating conditions of analog CMOS applications. Under these conditions, we find a hot-carrier induced damage proportional to the inverse...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Thewes, R., Walter, G.H., Brederlow, R., Schlunder, C., von Schwerin, A., Jurk, R., Linnenbank, C.G., Lengauer, G., Schmitt-Landsiedel, D., Weber, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analog circuits
Circuit noise
Degradation
Hot carriers
MOSFET circuits
Security
Shape
Signal design
Stress
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigate the hot-carrier degradation of large angle tilted implementation drain n-MOSFETs (LATID-n-MOSFETs) using specific stress techniques related to the operating conditions of analog CMOS applications. Under these conditions, we find a hot-carrier induced damage proportional to the inverse value of the channel length. The drain current degradation caused by this damage is proportional to (channel length)/sup S+1/, with S+1=2 in linear mode and S+1>2 in saturation mode. The physical insight achieved yields important information for analog CMOS reliability.
DOI:10.1109/RELPHY.1999.761618