Impact Ionization in SOI MESFETs at the 32-nm Node

Silicon metal-semiconductor FETs (MESFETs) have been fabricated using a 32-nm silicon-on-insulator (SOI) CMOS technology. The MESFET gates are formed during the self-aligned silicide step and show almost ideal Schottky behavior at low drain voltages. However, an anomalous peak in the reverse gate le...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2016-10, Vol.63 (10), p.4143-4146
Hauptverfasser:	Thornton, Trevor J., Lepkowski, William, Wilk, Seth J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Impact ionization Leakage currents Logic gates MESFETs metal–semiconductor FETs (MESFETs) partially depleted (PD) Schottky diodes Schottky junction Silicon silicon-on-insulator (SOI) Voltage measurement
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!