Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)

Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means...

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Veröffentlicht in:IEEE electron device letters 2016-10, Vol.37 (10), p.1268-1271
Hauptverfasser: Ambrogio, Stefano, Milo, Valerio, ZhongQiang Wang, Balatti, Simone, Ielmini, Daniele
Format: Artikel
Sprache:eng
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Zusammenfassung:Current overshoot due to parasitic capacitance during set transition represents a major concern for controlling the resistance and current consumption in resistive switching memory (RRAM) arrays. In this letter, the impact of current overshoot on the low-resistance state (LRS) is evaluated by means of experiments on one-transistor/one-resistor structures of HfO 2 RRAM. We develop a physics-based analytical model, able to calculate the LRS resistance and the corresponding reset current by a closed-form formula. The model allows predicting the current overshoot impact for any value of compliance current, set voltage, and parasitic capacitance.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2600574