A 0.076 mm2 12 b 26.5 mW 600 MS/s 4-Way Interleaved Subranging SAR- \Delta \Sigma ADC With On-Chip Buffer in 28 nm CMOS

A 0.076 mm 2 12b 28 nm 600 MS/s 4-way time interleaved ADC with on chip buffer is presented. The usage of a subranging scheme consisting of a coarse SAR ADC followed by an incremental ΔΣ fine converter provides better suppression of thermal noise added during conversion for a given power compared to...

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Veröffentlicht in:IEEE journal of solid-state circuits 2016-12, Vol.51 (12), p.2951-2962
Hauptverfasser: Venca, Alessandro, Ghittori, Nicola, Bosi, Alessandro, Nani, Claudio
Format: Artikel
Sprache:eng
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Zusammenfassung:A 0.076 mm 2 12b 28 nm 600 MS/s 4-way time interleaved ADC with on chip buffer is presented. The usage of a subranging scheme consisting of a coarse SAR ADC followed by an incremental ΔΣ fine converter provides better suppression of thermal noise added during conversion for a given power compared to a conventional SAR. The ADC area has been optimized by using a segmented charge-sharing charge-redistribution DAC. The prototype achieves an SNDR of 60.7 dB and 58 dB at low and high frequency, respectively, while consuming 26 mW.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2016.2591553