A 0.076 mm2 12 b 26.5 mW 600 MS/s 4-Way Interleaved Subranging SAR- \Delta \Sigma ADC With On-Chip Buffer in 28 nm CMOS
A 0.076 mm 2 12b 28 nm 600 MS/s 4-way time interleaved ADC with on chip buffer is presented. The usage of a subranging scheme consisting of a coarse SAR ADC followed by an incremental ΔΣ fine converter provides better suppression of thermal noise added during conversion for a given power compared to...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2016-12, Vol.51 (12), p.2951-2962 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A 0.076 mm 2 12b 28 nm 600 MS/s 4-way time interleaved ADC with on chip buffer is presented. The usage of a subranging scheme consisting of a coarse SAR ADC followed by an incremental ΔΣ fine converter provides better suppression of thermal noise added during conversion for a given power compared to a conventional SAR. The ADC area has been optimized by using a segmented charge-sharing charge-redistribution DAC. The prototype achieves an SNDR of 60.7 dB and 58 dB at low and high frequency, respectively, while consuming 26 mW. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2016.2591553 |