Characterization and optimization of infrared poly SiGe bolometers

In this paper, we present a complete characterization of poly SiGe bolometers. Devices having different dimensions and different geometry have been fabricated. The dependence of the low-frequency noise and of the temperature coefficient of resistance (TCR) on resistivity in poly SiGe has been measur...

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Veröffentlicht in:	IEEE transactions on electron devices 1999-04, Vol.46 (4), p.675-682
Hauptverfasser:	Sedky, S., Fiorini, P., Baert, K., Hermans, L., Mertens, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bolometers Conductivity Devices Electrical resistance measurement Electrical resistivity Focal plane Geometry Germanium silicon alloys Infrared Low-frequency noise Noise measurement Optimization Silicon germanides Silicon germanium Temperature dependence Voltage
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