Characterization and optimization of infrared poly SiGe bolometers

Characterization and optimization of infrared poly SiGe bolometers

In this paper, we present a complete characterization of poly SiGe bolometers. Devices having different dimensions and different geometry have been fabricated. The dependence of the low-frequency noise and of the temperature coefficient of resistance (TCR) on resistivity in poly SiGe has been measur...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on electron devices 1999-04, Vol.46 (4), p.675-682
Hauptverfasser: Sedky, S., Fiorini, P., Baert, K., Hermans, L., Mertens, R.
Format: Artikel
Sprache:eng
Schlagworte:
Bolometers
Conductivity
Devices
Electrical resistance measurement
Electrical resistivity
Focal plane
Geometry
Germanium silicon alloys
Infrared
Low-frequency noise
Noise measurement
Optimization
Silicon germanides
Silicon germanium
Temperature dependence
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we present a complete characterization of poly SiGe bolometers. Devices having different dimensions and different geometry have been fabricated. The dependence of the low-frequency noise and of the temperature coefficient of resistance (TCR) on resistivity in poly SiGe has been measured and modeled. The impact of resistivity, bias voltage, thermal conductance, thickness, and dimensions of the active element on the device performance has been investigated. It has been demonstrated that, by using the appropriate absorber and by optimizing the device parameters, poly SiGe bolometers are suitable for realizing high-performance focal plane arrays (FPA's).
ISSN:0018-9383
1557-9646
DOI:10.1109/16.753700