Methodologies for the Statistical Analysis of Memory Response to Radiation

Methodologies for the Statistical Analysis of Memory Response to Radiation

Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost...

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Veröffentlicht in:IEEE transactions on nuclear science 2016-08, Vol.63 (4), p.2122-2128
Hauptverfasser: Bosser, Alexandre L., Gupta, Viyas, Tsiligiannis, Georgios, Frost, Christopher D., Zadeh, Ali, Jaatinen, Jukka, Javanainen, Arto, Puchner, Helmut, Saigne, Frederic, Virtanen, Ari, Wrobel, Frederic, Dilillo, Luigi
Format: Artikel
Sprache:eng
Schlagworte:
Cluster of bit flips
dynamic test
Mathematics
multiple cell upset (MCU)
Neutrons
Nuclear Experiment
Numerical Analysis
Physics
Protons
radiation effects
Random access memory
Sensitivity
single event upset (SEU)
Single event upsets
SRAM
static test
Statistical analysis
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Beschreibung
Zusammenfassung:Methodologies are proposed for in-depth statistical analysis of Single Event Upset data. The motivation for using these methodologies is to obtain precise information on the intrinsic defects and weaknesses of the tested devices, and to gain insight on their failure mechanisms, at no additional cost. The case study is a 65 nm SRAM irradiated with neutrons, protons and heavy ions. This publication is an extended version of a previous study [1].
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2527781