Multilevel Anti-Fuse Cells by Progressive Rupturing of the High- \kappa Gate Dielectric in FinFET Technologies

Multilevel Anti-Fuse Cells by Progressive Rupturing of the High- \kappa Gate Dielectric in FinFET Technologies

A new operation scheme is proposed for achieving multilevel storage in FinFET one-time programmable (OTP) cells by a high-κ metal gate CMOS process. The OTP cells are programmed by breaking down the gate dielectric layer, during which the corner effect in the FinFET structure shortens the program ti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2016-09, Vol.37 (9), p.1120-1122
Hauptverfasser: Chen, Yu-Zheng, Yuan, Jo En, Lin, Chrong Jung, King, Ya-Chin
Format: Artikel
Sprache:eng
Schlagworte:
anti-fuse OTP
Breaking down
CMOS
CMOS integrated circuits
Corners
Dielectrics
Electric potential
FinFET
FinFETs
gate dielectric breakdown
Gates
HKMG
Logic gates
MLC
Multilevel
Nonvolatile memory
NVM
Resistance
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new operation scheme is proposed for achieving multilevel storage in FinFET one-time programmable (OTP) cells by a high-κ metal gate CMOS process. The OTP cells are programmed by breaking down the gate dielectric layer, during which the corner effect in the FinFET structure shortens the program time and lowers the program voltages. The after-breakdown resistance in the storage node is found to be well-controlled by the compliance current level set by the select transistor. By using WL voltage control, the multilevel OTP cell with superior data retention and disturb immunity is successfully used in advanced logic nonvolatile memory applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2591581