A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's

A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's

This paper explores the feasibility of combining calibrated AC 2-D numerical simulation and two of the latest Y-parameter-based noise models for predictive noise figure optimization in advanced UHV/CVD SiGe HBT's. At the operating current where the NE/sub min/ is the lowest, a close agreement b...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Niu, G., Ansley, W.E., Shiming Zhang, Cressler, J.D., Groves, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Germanium silicon alloys
Heterojunction bipolar transistors
Noise figure
Noise generators
Noise measurement
Numerical simulation
Optimization methods
Semiconductor process modeling
Silicon germanium
Thermal resistance
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper explores the feasibility of combining calibrated AC 2-D numerical simulation and two of the latest Y-parameter-based noise models for predictive noise figure optimization in advanced UHV/CVD SiGe HBT's. At the operating current where the NE/sub min/ is the lowest, a close agreement between simulation using both noise models and measurement is achieved from 2 GHz to 18 GHz. The impact of collector doping level on noise figure is also discussed.
DOI:10.1109/SMIC.1998.750172