Low pressure plasma immersion ion implantation of silicon

Low pressure plasma immersion ion implantation of silicon

Mono-energetic plasma immersion ion implantation (PIII) into silicon can be attained only under collisionless plasma conditions. In order to reduce the current load on the high voltage power supply and modulator and sample heating caused by implanted ions, the plasma pressure must be kept low (

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Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on plasma science 1998-12, Vol.26 (6), p.1661-1668
Hauptverfasser: Zhi-Neng Fan, Qing-Chuan Chen, Chu, P.K., Chung Chan
Format: Artikel
Sprache:eng
Schlagworte:
Heating
Hydrogen
Ions
Manufacturing
Plasma
Plasma immersion ion implantation
Plasma materials processing
Plasma properties
Plasma simulation
Power supplies
Semiconductors
Silicon on insulator technology
Space vector pulse width modulation
Voltage
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Zusammenfassung:Mono-energetic plasma immersion ion implantation (PIII) into silicon can be attained only under collisionless plasma conditions. In order to reduce the current load on the high voltage power supply and modulator and sample heating caused by implanted ions, the plasma pressure must be kept low (
ISSN:0093-3813
1939-9375
DOI:10.1109/27.747884