Optimization of Lateral Superjunction Based on the Minimum Specific ON-Resistance

The optimization methodology of the minimum specific ON-resistance R ON,min for the lateral superjunction device is proposed based on the concepts of charge and potential electric fields in this paper. From the R ON,min method, a new relationship between R ON and breakdown voltage V B is developed, and the analytical formulas are obtained to directly give the doping concentration N and the drift length L d . The calculated results, including the 800 and 1600 V examples, are in good agreement with the simulations. The optimized designs are also compared with the existing experimental and simulated data. It is shown that R ON from the proposed optimization method is minimum, and the methodology of R ON,min is universal.