Analysis of 7/8-nm Bulk-Si FinFET Technologies for 6T-SRAM Scaling

The benefits of a super-steep retrograde (SSR) fin doping profile, which can be achieved using the oxygen insertion technology, are quantified via 3-D technology computer-aided design simulations for the 7/8-nm bulk-Si FinFET technology targeting low-power applications. A calibrated compact model is then used to estimate the six-transistor static RAM cell performance and yield. The SSR FinFET technology is projected to provide for up to 100 mV reduction in minimum cell supply voltage, to facilitate voltage scaling to below 0.50 V.