GaAs based opto-thyristor for pulsed power applications

GaAs based opto-thyristor for pulsed power applications

An optically gated, GaAs bipolar junction thyristor with a semi-insulating base layer, specifically developed for pulsed power applications, is reported, and initial device performance characteristics as a pulsed power switch are presented. The measured DC blocking voltage of the device was >600...

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Hauptverfasser: Hur, J.H., Hadizad, P., Hummel, S.G., Dzurko, K.M., Dapkus, P.D., Gundersen, M.A., Fetterman, H.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
MOCVD
Optical pulses
Optical saturation
Optical switches
Photonic band gap
Power semiconductor switches
Pulse measurements
Pulse power systems
Thyristors
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Beschreibung
Zusammenfassung:An optically gated, GaAs bipolar junction thyristor with a semi-insulating base layer, specifically developed for pulsed power applications, is reported, and initial device performance characteristics as a pulsed power switch are presented. The measured DC blocking voltage of the device was >600 V, peak pulsed current was >or=70 A, and the current rise rate was >1.4*10/sup 9/ A/s. These results demonstrate that GaAs based junction devices have significant potential as switching elements for pulsed power systems requiring very fast closing times.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1989.74307