MOS trench gate field-controlled thyristor

A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic w...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Change, H., Holroyd, F.W., Baliga, B.J., Kretchmer, J.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Anodes Cathodes Computational modeling Control systems Current density Insulated gate bipolar transistors Low voltage P-i-n diodes Research and development Thyristors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!