MOS trench gate field-controlled thyristor

MOS trench gate field-controlled thyristor

A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic w...

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Bibliographische Detailangaben
Hauptverfasser: Change, H., Holroyd, F.W., Baliga, B.J., Kretchmer, J.W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
Computational modeling
Control systems
Current density
Insulated gate bipolar transistors
Low voltage
P-i-n diodes
Research and development
Thyristors
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Beschreibung
Zusammenfassung:A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1989.74282