MOS trench gate field-controlled thyristor

MOS trench gate field-controlled thyristor

A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic w...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Change, H., Holroyd, F.W., Baliga, B.J., Kretchmer, J.W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Cathodes
Computational modeling
Control systems
Current density
Insulated gate bipolar transistors
Low voltage
P-i-n diodes
Research and development
Thyristors
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 296
container_issue
container_start_page 293
container_title
container_volume
creator Change, H.
Holroyd, F.W.
Baliga, B.J.
Kretchmer, J.W.
description A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.< >
doi_str_mv 10.1109/IEDM.1989.74282
format Conference Proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_74282</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>74282</ieee_id><sourcerecordid>74282</sourcerecordid><originalsourceid>FETCH-LOGICAL-i86t-7bf3b7315bcee9cd982dadd29d8af467b6e74eaeb541634d5da47047a5c508393</originalsourceid><addsrcrecordid>eNotjz1PwzAUAC0-JNrCjNgyIzm85488e0SlQKVWHejAVjnxCw0KDXK89N-DCtNtpzshbhFKRPAPy8XTukTvfElGOXUmJgptJQHp_VxMgRxocEjmQkwAKy3Ro7sS03H8BFBkvZ2I-_XmrciJD82--AiZi7bjPspmOOQ09D3HIu-PqRvzkK7FZRv6kW_-ORPb58V2_ipXm5fl_HElO1dlSXWra9Jo64bZN9E7FUOMykcXWlNRXTEZDlxb85tkoo3BEBgKtrHgtNczcfen7Zh59526r5COu9Og_gEqQEJH</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>MOS trench gate field-controlled thyristor</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Change, H. ; Holroyd, F.W. ; Baliga, B.J. ; Kretchmer, J.W.</creator><creatorcontrib>Change, H. ; Holroyd, F.W. ; Baliga, B.J. ; Kretchmer, J.W.</creatorcontrib><description>A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.&lt; &gt;</description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1989.74282</identifier><language>eng</language><publisher>IEEE</publisher><subject>Anodes ; Cathodes ; Computational modeling ; Control systems ; Current density ; Insulated gate bipolar transistors ; Low voltage ; P-i-n diodes ; Research and development ; Thyristors</subject><ispartof>International Technical Digest on Electron Devices Meeting, 1989, p.293-296</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74282$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4048,4049,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74282$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Change, H.</creatorcontrib><creatorcontrib>Holroyd, F.W.</creatorcontrib><creatorcontrib>Baliga, B.J.</creatorcontrib><creatorcontrib>Kretchmer, J.W.</creatorcontrib><title>MOS trench gate field-controlled thyristor</title><title>International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.&lt; &gt;</description><subject>Anodes</subject><subject>Cathodes</subject><subject>Computational modeling</subject><subject>Control systems</subject><subject>Current density</subject><subject>Insulated gate bipolar transistors</subject><subject>Low voltage</subject><subject>P-i-n diodes</subject><subject>Research and development</subject><subject>Thyristors</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotjz1PwzAUAC0-JNrCjNgyIzm85488e0SlQKVWHejAVjnxCw0KDXK89N-DCtNtpzshbhFKRPAPy8XTukTvfElGOXUmJgptJQHp_VxMgRxocEjmQkwAKy3Ro7sS03H8BFBkvZ2I-_XmrciJD82--AiZi7bjPspmOOQ09D3HIu-PqRvzkK7FZRv6kW_-ORPb58V2_ipXm5fl_HElO1dlSXWra9Jo64bZN9E7FUOMykcXWlNRXTEZDlxb85tkoo3BEBgKtrHgtNczcfen7Zh59526r5COu9Og_gEqQEJH</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>Change, H.</creator><creator>Holroyd, F.W.</creator><creator>Baliga, B.J.</creator><creator>Kretchmer, J.W.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1989</creationdate><title>MOS trench gate field-controlled thyristor</title><author>Change, H. ; Holroyd, F.W. ; Baliga, B.J. ; Kretchmer, J.W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i86t-7bf3b7315bcee9cd982dadd29d8af467b6e74eaeb541634d5da47047a5c508393</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Anodes</topic><topic>Cathodes</topic><topic>Computational modeling</topic><topic>Control systems</topic><topic>Current density</topic><topic>Insulated gate bipolar transistors</topic><topic>Low voltage</topic><topic>P-i-n diodes</topic><topic>Research and development</topic><topic>Thyristors</topic><toplevel>online_resources</toplevel><creatorcontrib>Change, H.</creatorcontrib><creatorcontrib>Holroyd, F.W.</creatorcontrib><creatorcontrib>Baliga, B.J.</creatorcontrib><creatorcontrib>Kretchmer, J.W.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Change, H.</au><au>Holroyd, F.W.</au><au>Baliga, B.J.</au><au>Kretchmer, J.W.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MOS trench gate field-controlled thyristor</atitle><btitle>International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1989</date><risdate>1989</risdate><spage>293</spage><epage>296</epage><pages>293-296</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>A novel device structure for a field-controlled thyristor (FCT) utilizing MOS trench gates (UMOS) to control the turn-off of the device is described. Two-dimensional computer modeling of static and dynamic characteristics was performed. This device exhibits a good forward conduction characteristic with a low forward voltage drop at high current densities. Simulation results on transient turn-off showed a turn-off capability of 500 A/cm/sup 2/ with the use of a reasonable gate bias. Experimental devices of the UMOS FCT were designed and fabricated. A turn-off current of 3.8 A with a very high turn-off current gain has been achieved.&lt; &gt;</abstract><pub>IEEE</pub><doi>10.1109/IEDM.1989.74282</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0163-1918
ispartof International Technical Digest on Electron Devices Meeting, 1989, p.293-296
issn 0163-1918
2156-017X
language eng
recordid cdi_ieee_primary_74282
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Anodes
Cathodes
Computational modeling
Control systems
Current density
Insulated gate bipolar transistors
Low voltage
P-i-n diodes
Research and development
Thyristors
title MOS trench gate field-controlled thyristor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T20%3A23%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=MOS%20trench%20gate%20field-controlled%20thyristor&rft.btitle=International%20Technical%20Digest%20on%20Electron%20Devices%20Meeting&rft.au=Change,%20H.&rft.date=1989&rft.spage=293&rft.epage=296&rft.pages=293-296&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=0780308174&rft.isbn_list=9780780308176&rft_id=info:doi/10.1109/IEDM.1989.74282&rft_dat=%3Cieee_6IE%3E74282%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=74282&rfr_iscdi=true