High speed and low power consumption DMT integrated circuits based on direct-coupled FET logic circuits
High-speed and low-power-consumption 5-b shift registers based on 0.5- mu m-gate E/D-DMTs (doped-channel hetero-MISFETs) are described. The devices were fabricated using n/sup +/-GaAs selective MOCVD (metalorganic chemical vapor deposition) growth and AlGaAs-GaAs selective dry etching techniques. Th...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | High-speed and low-power-consumption 5-b shift registers based on 0.5- mu m-gate E/D-DMTs (doped-channel hetero-MISFETs) are described. The devices were fabricated using n/sup +/-GaAs selective MOCVD (metalorganic chemical vapor deposition) growth and AlGaAs-GaAs selective dry etching techniques. The developed technologies allow parasitic resistance reduction and short channel effect suppression, resulting in high-performance E/D-DMTs with excellent uniformity. The ICs fabricated using these technologies operate up to 5 Gb/s with very small power consumption of 45 mW (1.1 mW/gate, 20- mu m width for an E-DMT driver).< > |
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ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.1989.74240 |