Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gall...

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Veröffentlicht in:	IEEE electron device letters 2016-05, Vol.37 (5), p.591-594
Hauptverfasser:	Xiao, Hui, Zhu, Li Qiang, Wan, Chang Jin, Liu, Yang Hui, Liu, Rui, Wan, Qing
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Electric-double-layer transistor Glass Indium tin oxide Inverters Logic gates Phosphorosilicate glass electrolyte Stress Transistors
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container_issue	5
container_start_page	591
container_title	IEEE electron device letters
container_volume	37
creator	Xiao, Hui Zhu, Li Qiang Wan, Chang Jin Liu, Yang Hui Liu, Rui Wan, Qing
description	A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of
doi_str_mv	10.1109/LED.2016.2536699
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fullrecord	<record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_7422686</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7422686</ieee_id><sourcerecordid>4047110871</sourcerecordid><originalsourceid>FETCH-LOGICAL-c291t-f1ca4f924043807f61b156f9440a64491ac8f9b5fbdc70fad2cf38d475b1d4023</originalsourceid><addsrcrecordid>eNo9kE1LAzEQhoMoWKt3wcuC562ZbD6P0tZaWOihreBpSTdJ2bJuapKq_feutHial-F5Z-BB6B7wCACrp3I6GREMfERYwblSF2gAjMkcM15cogEWFPICML9GNzHuMAZKBR2g99J_52--TXprs4ndtzY1vstLr002775sSDZk69h022zp28bky6STzaatrVPw7bHPs35hssVPY2y2CrqLTUw-xFt05XQb7d15DtH6Zboav-blYjYfP5d5TRSk3EGtqVOEYlpILByHDTDuFKVYc0oV6Fo6tWFuY2qBnTakdoU0VLANGIpJMUSPp7v74D8PNqZq5w-h619WIKQACYrJnsInqg4-xmBdtQ_Nhw7HCnD1J7DqBVZ_AquzwL7ycKo01tp_XFBCuOTFL3jUbAw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1787181958</pqid></control><display><type>article</type><title>Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Xiao, Hui ; Zhu, Li Qiang ; Wan, Chang Jin ; Liu, Yang Hui ; Liu, Rui ; Wan, Qing</creator><creatorcontrib>Xiao, Hui ; Zhu, Li Qiang ; Wan, Chang Jin ; Liu, Yang Hui ; Liu, Rui ; Wan, Qing</creatorcontrib><description>A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of <;0.2 V at low supply voltage of 2 V. The proposed low-voltage inverter may find potential applications in portable electronics and biosensors.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2016.2536699</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Electric-double-layer transistor ; Glass ; Indium tin oxide ; Inverters ; Logic gates ; Phosphorosilicate glass electrolyte ; Stress ; Transistors</subject><ispartof>IEEE electron device letters, 2016-05, Vol.37 (5), p.591-594</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2016</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-f1ca4f924043807f61b156f9440a64491ac8f9b5fbdc70fad2cf38d475b1d4023</citedby><cites>FETCH-LOGICAL-c291t-f1ca4f924043807f61b156f9440a64491ac8f9b5fbdc70fad2cf38d475b1d4023</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7422686$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7422686$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xiao, Hui</creatorcontrib><creatorcontrib>Zhu, Li Qiang</creatorcontrib><creatorcontrib>Wan, Chang Jin</creatorcontrib><creatorcontrib>Liu, Yang Hui</creatorcontrib><creatorcontrib>Liu, Rui</creatorcontrib><creatorcontrib>Wan, Qing</creatorcontrib><title>Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of <;0.2 V at low supply voltage of 2 V. The proposed low-voltage inverter may find potential applications in portable electronics and biosensors.</description><subject>Capacitance</subject><subject>Electric-double-layer transistor</subject><subject>Glass</subject><subject>Indium tin oxide</subject><subject>Inverters</subject><subject>Logic gates</subject><subject>Phosphorosilicate glass electrolyte</subject><subject>Stress</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKt3wcuC562ZbD6P0tZaWOihreBpSTdJ2bJuapKq_feutHial-F5Z-BB6B7wCACrp3I6GREMfERYwblSF2gAjMkcM15cogEWFPICML9GNzHuMAZKBR2g99J_52--TXprs4ndtzY1vstLr002775sSDZk69h022zp28bky6STzaatrVPw7bHPs35hssVPY2y2CrqLTUw-xFt05XQb7d15DtH6Zboav-blYjYfP5d5TRSk3EGtqVOEYlpILByHDTDuFKVYc0oV6Fo6tWFuY2qBnTakdoU0VLANGIpJMUSPp7v74D8PNqZq5w-h619WIKQACYrJnsInqg4-xmBdtQ_Nhw7HCnD1J7DqBVZ_AquzwL7ycKo01tp_XFBCuOTFL3jUbAw</recordid><startdate>201605</startdate><enddate>201605</enddate><creator>Xiao, Hui</creator><creator>Zhu, Li Qiang</creator><creator>Wan, Chang Jin</creator><creator>Liu, Yang Hui</creator><creator>Liu, Rui</creator><creator>Wan, Qing</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201605</creationdate><title>Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors</title><author>Xiao, Hui ; Zhu, Li Qiang ; Wan, Chang Jin ; Liu, Yang Hui ; Liu, Rui ; Wan, Qing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-f1ca4f924043807f61b156f9440a64491ac8f9b5fbdc70fad2cf38d475b1d4023</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Capacitance</topic><topic>Electric-double-layer transistor</topic><topic>Glass</topic><topic>Indium tin oxide</topic><topic>Inverters</topic><topic>Logic gates</topic><topic>Phosphorosilicate glass electrolyte</topic><topic>Stress</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xiao, Hui</creatorcontrib><creatorcontrib>Zhu, Li Qiang</creatorcontrib><creatorcontrib>Wan, Chang Jin</creatorcontrib><creatorcontrib>Liu, Yang Hui</creatorcontrib><creatorcontrib>Liu, Rui</creatorcontrib><creatorcontrib>Wan, Qing</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiao, Hui</au><au>Zhu, Li Qiang</au><au>Wan, Chang Jin</au><au>Liu, Yang Hui</au><au>Liu, Rui</au><au>Wan, Qing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2016-05</date><risdate>2016</risdate><volume>37</volume><issue>5</issue><spage>591</spage><epage>594</epage><pages>591-594</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of <;0.2 V at low supply voltage of 2 V. The proposed low-voltage inverter may find potential applications in portable electronics and biosensors.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2016.2536699</doi><tpages>4</tpages></addata></record>
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subjects	Capacitance Electric-double-layer transistor Glass Indium tin oxide Inverters Logic gates Phosphorosilicate glass electrolyte Stress Transistors
title	Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T04%3A44%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-Voltage%20Depletion-Load%20Inverter%20Using%20Solid-State%20Electrolyte%20Gated%20Oxide%20Transistors&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Xiao,%20Hui&rft.date=2016-05&rft.volume=37&rft.issue=5&rft.spage=591&rft.epage=594&rft.pages=591-594&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2016.2536699&rft_dat=%3Cproquest_RIE%3E4047110871%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1787181958&rft_id=info:pmid/&rft_ieee_id=7422686&rfr_iscdi=true