Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

Low-Voltage Depletion-Load Inverter Using Solid-State Electrolyte Gated Oxide Transistors

A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gall...

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Veröffentlicht in:IEEE electron device letters 2016-05, Vol.37 (5), p.591-594
Hauptverfasser: Xiao, Hui, Zhu, Li Qiang, Wan, Chang Jin, Liu, Yang Hui, Liu, Rui, Wan, Qing
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Electric-double-layer transistor
Glass
Indium tin oxide
Inverters
Logic gates
Phosphorosilicate glass electrolyte
Stress
Transistors
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Zusammenfassung:A low-voltage depletion-load inverter consisting of oxide transistors gated by nanogranular phosphorosilicate glass electrolytes has been fabricated. An indium-zinc-oxide electric-double-layer (EDL) transistor shows a threshold voltage (Vth) of approximately -0.1 V and acts as a load. An indium-gallium- zinc-oxide EDL transistor shows a Vth of ~0.3 V and acts as a driver. The depletion-load inverter shows a high voltage gain of 40 and a narrow transition width of
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2016.2536699