Prediction of thermal resistance in trench isolated bipolar device structures

A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over tw...

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Hauptverfasser: Walkey, D.J., Smy, T.J., Tran, H., Marchesan, D., Schroter, M.
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Smy, T.J.
Tran, H.
Marchesan, D.
Schroter, M.
description A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.
doi_str_mv 10.1109/BIPOL.1998.741926
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identifier ISSN: 1088-9299
ispartof Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198), 1998, p.207-210
issn 1088-9299
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Electrical resistance measurement
Geometry
Integral equations
Power generation
Predictive models
Semiconductor device modeling
Solid modeling
Temperature
Thermal conductivity
Thermal resistance
title Prediction of thermal resistance in trench isolated bipolar device structures
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