Prediction of thermal resistance in trench isolated bipolar device structures
A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over tw...
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creator | Walkey, D.J. Smy, T.J. Tran, H. Marchesan, D. Schroter, M. |
description | A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers. |
doi_str_mv | 10.1109/BIPOL.1998.741926 |
format | Conference Proceeding |
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The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.</description><subject>Electrical resistance measurement</subject><subject>Geometry</subject><subject>Integral equations</subject><subject>Power generation</subject><subject>Predictive models</subject><subject>Semiconductor device modeling</subject><subject>Solid modeling</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>0780344979</isbn><isbn>9780780344976</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUE1PAjEUbPxIBPQH6Kl_YPG1Xfb1HZWIkmDgoIk30m0foQYW0hYT_72b4FxmDjOTzAhxr2CsFNDj83y1XIwVkR1jrUg3F2KgDdpqQvB1KYaAFkxdE9KVGCiwtiJNdCOGOX8DaNBoB-J9lThEX-Khk4eNLFtOe7eTiXPMxXWeZexkSdz5rYz5sHOFg2zjsVdJBv6JvSOXdPLl1GduxfXG7TLf_fNIfM5ePqZv1WL5Op8-LaqooC6Vhg3WrWNA79tgCBEmjQGL1jdO2aDBt43tAY3BQAy6xVAD9Rtsgx7NSDyceyMzr48p7l36XZ9fMH81a09x</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Walkey, D.J.</creator><creator>Smy, T.J.</creator><creator>Tran, H.</creator><creator>Marchesan, D.</creator><creator>Schroter, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>Prediction of thermal resistance in trench isolated bipolar device structures</title><author>Walkey, D.J. ; Smy, T.J. ; Tran, H. ; Marchesan, D. ; Schroter, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-20f74bae07ccbd397705630878c6a18d20cb688880637d9e02b7d409088867c73</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Electrical resistance measurement</topic><topic>Geometry</topic><topic>Integral equations</topic><topic>Power generation</topic><topic>Predictive models</topic><topic>Semiconductor device modeling</topic><topic>Solid modeling</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Walkey, D.J.</creatorcontrib><creatorcontrib>Smy, T.J.</creatorcontrib><creatorcontrib>Tran, H.</creatorcontrib><creatorcontrib>Marchesan, D.</creatorcontrib><creatorcontrib>Schroter, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Walkey, D.J.</au><au>Smy, T.J.</au><au>Tran, H.</au><au>Marchesan, D.</au><au>Schroter, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Prediction of thermal resistance in trench isolated bipolar device structures</atitle><btitle>Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)</btitle><stitle>BIPOL</stitle><date>1998</date><risdate>1998</risdate><spage>207</spage><epage>210</epage><pages>207-210</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>0780344979</isbn><isbn>9780780344976</isbn><abstract>A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.1998.741926</doi><tpages>4</tpages></addata></record> |
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identifier | ISSN: 1088-9299 |
ispartof | Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198), 1998, p.207-210 |
issn | 1088-9299 2378-590X |
language | eng |
recordid | cdi_ieee_primary_741926 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Electrical resistance measurement Geometry Integral equations Power generation Predictive models Semiconductor device modeling Solid modeling Temperature Thermal conductivity Thermal resistance |
title | Prediction of thermal resistance in trench isolated bipolar device structures |
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