Prediction of thermal resistance in trench isolated bipolar device structures

Prediction of thermal resistance in trench isolated bipolar device structures

A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over tw...

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Bibliographische Detailangaben
Hauptverfasser: Walkey, D.J., Smy, T.J., Tran, H., Marchesan, D., Schroter, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrical resistance measurement
Geometry
Integral equations
Power generation
Predictive models
Semiconductor device modeling
Solid modeling
Temperature
Thermal conductivity
Thermal resistance
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Beschreibung
Zusammenfassung:A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel's 0.35 /spl mu/m trench isolated 35 GHz f/sub T/ bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.1998.741926