Process HJ: a 30 GHz NPN and 20 GHz PNP complementary bipolar process for high linearity RF circuits

Process HJ: a 30 GHz NPN and 20 GHz PNP complementary bipolar process for high linearity RF circuits

This paper describes "Process HJ" a new high speed, low power complementary bipolar technology suitable for RF applications, which features high frequency NPN and PNP transistors of 30 GHz and 20 GHz, respectively. The technology uses fully isolated double polysilicon self-aligned architec...

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Hauptverfasser: Wilson, M.C., Osborne, P.H., Nigrin, S., Goody, S.B., Green, J., Harrington, S.J., Cook, T., Thomas, S., Manson, A.J., Madni, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitors
Circuits
Implants
Inductors
Isolation technology
Linearity
Metallization
Mobile communication
Radio frequency
Resistors
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Beschreibung
Zusammenfassung:This paper describes "Process HJ" a new high speed, low power complementary bipolar technology suitable for RF applications, which features high frequency NPN and PNP transistors of 30 GHz and 20 GHz, respectively. The technology uses fully isolated double polysilicon self-aligned architecture and 0.6 /spl mu/m emitters. Resistors, capacitors, inductors and 3 levels of metallisation are also incorporated.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.1998.741914