Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process

Experimental results are presented on a set of microwave transmission line structures and planar inductors fabricated on a thick polyimide dielectric in a production Si/SiGe HBT technology using standard metallization. Microstrip transmission lines with characteristic impedances between 44-73 ohms,...

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Bibliographische Detailangaben
Hauptverfasser: Laney, D.C., Larson, L.E., Malinowski, J., Harame, D., Subbanna, S., Volant, R., Case, M., Chan, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Dielectrics
Germanium silicon alloys
Heterojunction bipolar transistors
Inductors
Microwave technology
Planar transmission lines
Polyimides
Production
Silicon germanium
Transmission lines
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Beschreibung
Zusammenfassung:Experimental results are presented on a set of microwave transmission line structures and planar inductors fabricated on a thick polyimide dielectric in a production Si/SiGe HBT technology using standard metallization. Microstrip transmission lines with characteristic impedances between 44-73 ohms, with losses at 10 GHz of 0.15 dB/mm and Q's between 10-14 are presented. Inductances between 0.5-15 nH with Q's up to 22 are also presented.
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.1998.741889