Ultra-high speed CMOS circuits in thin SIMOX films
CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the S...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 832 |
|---|---|
| container_issue | |
| container_start_page | 829 |
| container_title | |
| container_volume | |
| creator | Kamgar, A. Hillenius, S.J. Cong, H.-I. Field, R.L. Lindenberger, W.S. Celler, G.K. Trimble, L.E. Sturm, J.C. |
| description | CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< > |
| doi_str_mv | 10.1109/IEDM.1989.74181 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_74181</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>74181</ieee_id><sourcerecordid>74181</sourcerecordid><originalsourceid>FETCH-LOGICAL-i86t-3fc0a9ea64b37da1e954689725a808a673c97dabbd95385bb960237660a4e87d3</originalsourceid><addsrcrecordid>eNotj71OwzAURi1-JNLCjNj8Ag73xrF9PaLQQqRGGVqkbpWTOMQoRVUcBt6eCli-I53hSB9j9wgpItjHcvVcpWjJpiZHwguWZKi0ADT7S7YAQyCB0ORXLAHUUqBFumGLGD8AMqOsSlj2Ns6TE0N4H3g8ed_xoqq3vA1T-xXmyMMnn4fzbMuq3vM-jMd4y657N0Z_988l261Xu-JVbOqXsnjaiEB6FrJvwVnvdN5I0zn0VuWarMmUIyCnjWzt2TdNZ5Uk1TRWQyaN1uByT6aTS_bwlw3e-8NpCkc3fR9-j8ofqLJDAw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Ultra-high speed CMOS circuits in thin SIMOX films</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Kamgar, A. ; Hillenius, S.J. ; Cong, H.-I. ; Field, R.L. ; Lindenberger, W.S. ; Celler, G.K. ; Trimble, L.E. ; Sturm, J.C.</creator><creatorcontrib>Kamgar, A. ; Hillenius, S.J. ; Cong, H.-I. ; Field, R.L. ; Lindenberger, W.S. ; Celler, G.K. ; Trimble, L.E. ; Sturm, J.C.</creatorcontrib><description>CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< ></description><identifier>ISSN: 0163-1918</identifier><identifier>ISBN: 0780308174</identifier><identifier>ISBN: 9780780308176</identifier><identifier>EISSN: 2156-017X</identifier><identifier>DOI: 10.1109/IEDM.1989.74181</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Capacitance ; CMOS digital integrated circuits ; CMOS process ; CMOS technology ; Counting circuits ; Fabrication ; Optical feedback ; Semiconductor films ; Temperature</subject><ispartof>International Technical Digest on Electron Devices Meeting, 1989, p.829-832</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/74181$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/74181$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kamgar, A.</creatorcontrib><creatorcontrib>Hillenius, S.J.</creatorcontrib><creatorcontrib>Cong, H.-I.</creatorcontrib><creatorcontrib>Field, R.L.</creatorcontrib><creatorcontrib>Lindenberger, W.S.</creatorcontrib><creatorcontrib>Celler, G.K.</creatorcontrib><creatorcontrib>Trimble, L.E.</creatorcontrib><creatorcontrib>Sturm, J.C.</creatorcontrib><title>Ultra-high speed CMOS circuits in thin SIMOX films</title><title>International Technical Digest on Electron Devices Meeting</title><addtitle>IEDM</addtitle><description>CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< ></description><subject>Annealing</subject><subject>Capacitance</subject><subject>CMOS digital integrated circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>Counting circuits</subject><subject>Fabrication</subject><subject>Optical feedback</subject><subject>Semiconductor films</subject><subject>Temperature</subject><issn>0163-1918</issn><issn>2156-017X</issn><isbn>0780308174</isbn><isbn>9780780308176</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj71OwzAURi1-JNLCjNj8Ag73xrF9PaLQQqRGGVqkbpWTOMQoRVUcBt6eCli-I53hSB9j9wgpItjHcvVcpWjJpiZHwguWZKi0ADT7S7YAQyCB0ORXLAHUUqBFumGLGD8AMqOsSlj2Ns6TE0N4H3g8ed_xoqq3vA1T-xXmyMMnn4fzbMuq3vM-jMd4y657N0Z_988l261Xu-JVbOqXsnjaiEB6FrJvwVnvdN5I0zn0VuWarMmUIyCnjWzt2TdNZ5Uk1TRWQyaN1uByT6aTS_bwlw3e-8NpCkc3fR9-j8ofqLJDAw</recordid><startdate>1989</startdate><enddate>1989</enddate><creator>Kamgar, A.</creator><creator>Hillenius, S.J.</creator><creator>Cong, H.-I.</creator><creator>Field, R.L.</creator><creator>Lindenberger, W.S.</creator><creator>Celler, G.K.</creator><creator>Trimble, L.E.</creator><creator>Sturm, J.C.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1989</creationdate><title>Ultra-high speed CMOS circuits in thin SIMOX films</title><author>Kamgar, A. ; Hillenius, S.J. ; Cong, H.-I. ; Field, R.L. ; Lindenberger, W.S. ; Celler, G.K. ; Trimble, L.E. ; Sturm, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i86t-3fc0a9ea64b37da1e954689725a808a673c97dabbd95385bb960237660a4e87d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Annealing</topic><topic>Capacitance</topic><topic>CMOS digital integrated circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>Counting circuits</topic><topic>Fabrication</topic><topic>Optical feedback</topic><topic>Semiconductor films</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Kamgar, A.</creatorcontrib><creatorcontrib>Hillenius, S.J.</creatorcontrib><creatorcontrib>Cong, H.-I.</creatorcontrib><creatorcontrib>Field, R.L.</creatorcontrib><creatorcontrib>Lindenberger, W.S.</creatorcontrib><creatorcontrib>Celler, G.K.</creatorcontrib><creatorcontrib>Trimble, L.E.</creatorcontrib><creatorcontrib>Sturm, J.C.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kamgar, A.</au><au>Hillenius, S.J.</au><au>Cong, H.-I.</au><au>Field, R.L.</au><au>Lindenberger, W.S.</au><au>Celler, G.K.</au><au>Trimble, L.E.</au><au>Sturm, J.C.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Ultra-high speed CMOS circuits in thin SIMOX films</atitle><btitle>International Technical Digest on Electron Devices Meeting</btitle><stitle>IEDM</stitle><date>1989</date><risdate>1989</risdate><spage>829</spage><epage>832</epage><pages>829-832</pages><issn>0163-1918</issn><eissn>2156-017X</eissn><isbn>0780308174</isbn><isbn>9780780308176</isbn><abstract>CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< ></abstract><pub>IEEE</pub><doi>10.1109/IEDM.1989.74181</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0163-1918 |
| ispartof | International Technical Digest on Electron Devices Meeting, 1989, p.829-832 |
| issn | 0163-1918 2156-017X |
| language | eng |
| recordid | cdi_ieee_primary_74181 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitance CMOS digital integrated circuits CMOS process CMOS technology Counting circuits Fabrication Optical feedback Semiconductor films Temperature |
| title | Ultra-high speed CMOS circuits in thin SIMOX films |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T16%3A10%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Ultra-high%20speed%20CMOS%20circuits%20in%20thin%20SIMOX%20films&rft.btitle=International%20Technical%20Digest%20on%20Electron%20Devices%20Meeting&rft.au=Kamgar,%20A.&rft.date=1989&rft.spage=829&rft.epage=832&rft.pages=829-832&rft.issn=0163-1918&rft.eissn=2156-017X&rft.isbn=0780308174&rft.isbn_list=9780780308176&rft_id=info:doi/10.1109/IEDM.1989.74181&rft_dat=%3Cieee_6IE%3E74181%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=74181&rfr_iscdi=true |