Ultra-high speed CMOS circuits in thin SIMOX films

Ultra-high speed CMOS circuits in thin SIMOX films

CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the S...

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Bibliographische Detailangaben
Hauptverfasser: Kamgar, A., Hillenius, S.J., Cong, H.-I., Field, R.L., Lindenberger, W.S., Celler, G.K., Trimble, L.E., Sturm, J.C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Capacitance
CMOS digital integrated circuits
CMOS process
CMOS technology
Counting circuits
Fabrication
Optical feedback
Semiconductor films
Temperature
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Beschreibung
Zusammenfassung:CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.< >
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.1989.74181