Blue InGaN MQW laser diodes on sapphire

We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.

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Bibliographische Detailangaben
Hauptverfasser:	DenBaars, S.P., Abare, A.C., Mack, M.P., Hansen, M., Sink, R.K., Kozodoy, P., Keller, S., Speck, J.S., Bowers, J.E., Mishra, U.K., Coldren, L.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Diode lasers Etching Laser theory Optical pulses Physics Quantum well devices Semiconductor diodes Semiconductor lasers Temperature Threshold current
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Beschreibung
Zusammenfassung:	We report on the properties of blue InGaN MQW laser diodes fabricated using reactive ion etched facets on c-plane sapphire and cleaved facets on a-plane sapphire. We have also investigated the use of silicon doping in the quantum wells for the etched facet lasers.
DOI:	10.1109/LEOS.1998.739704