Advanced SOI CMOS technology for RF applications
Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors f...
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creator | Demeus, L. Chen, J. Eggermont, J.-P. Gillon, R. Raskin, J.-P. Vanhoenacker, D. Flandre, D. |
description | Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results. |
doi_str_mv | 10.1109/ISSSE.1998.738053 |
format | Conference Proceeding |
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These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results.</description><identifier>ISBN: 9780780349001</identifier><identifier>ISBN: 0780349008</identifier><identifier>DOI: 10.1109/ISSSE.1998.738053</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS technology ; MOSFET circuits ; Power MOSFET ; Power supplies ; Radio frequency ; Semiconductor thin films ; Silicon on insulator technology ; Thin film circuits ; Thin film devices ; Transistors</subject><ispartof>1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. 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To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results.</description><subject>CMOS technology</subject><subject>MOSFET circuits</subject><subject>Power MOSFET</subject><subject>Power supplies</subject><subject>Radio frequency</subject><subject>Semiconductor thin films</subject><subject>Silicon on insulator technology</subject><subject>Thin film circuits</subject><subject>Thin film devices</subject><subject>Transistors</subject><isbn>9780780349001</isbn><isbn>0780349008</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1FrgzAUhQNjsNH5A7qn_AHdvcbE5LFIuwktwlyfS4w3W4ZTURn030_oDgc-OA8fHMa2CAkimJeyrut9gsboJBcapLhjkck1rBWZAcAHFs3zN6wRRslcPjLYtb-2d9Tyuip5capqvpD76odu-LxyP0z8_cDtOHbB2SUM_fzE7r3tZor-uWHnw_6jeIuP1WtZ7I5xQMiW2LdaokfvMBWqsR5UCkYjNdR4ZbIUKRdSpdh4bfNWr5NwgpyU0pCXzogNe755AxFdxin82Ol6ud0Sf5vZQVA</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Demeus, L.</creator><creator>Chen, J.</creator><creator>Eggermont, J.-P.</creator><creator>Gillon, R.</creator><creator>Raskin, J.-P.</creator><creator>Vanhoenacker, D.</creator><creator>Flandre, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1998</creationdate><title>Advanced SOI CMOS technology for RF applications</title><author>Demeus, L. ; Chen, J. ; Eggermont, J.-P. ; Gillon, R. ; Raskin, J.-P. ; Vanhoenacker, D. ; Flandre, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-fd851f1fc1236baf0620981ebebf69421e735621bf8a7d86943c3ec5559ef5c93</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>CMOS technology</topic><topic>MOSFET circuits</topic><topic>Power MOSFET</topic><topic>Power supplies</topic><topic>Radio frequency</topic><topic>Semiconductor thin films</topic><topic>Silicon on insulator technology</topic><topic>Thin film circuits</topic><topic>Thin film devices</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Demeus, L.</creatorcontrib><creatorcontrib>Chen, J.</creatorcontrib><creatorcontrib>Eggermont, J.-P.</creatorcontrib><creatorcontrib>Gillon, R.</creatorcontrib><creatorcontrib>Raskin, J.-P.</creatorcontrib><creatorcontrib>Vanhoenacker, D.</creatorcontrib><creatorcontrib>Flandre, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Demeus, L.</au><au>Chen, J.</au><au>Eggermont, J.-P.</au><au>Gillon, R.</au><au>Raskin, J.-P.</au><au>Vanhoenacker, D.</au><au>Flandre, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Advanced SOI CMOS technology for RF applications</atitle><btitle>1998 URSI International Symposium on Signals, Systems, and Electronics. 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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | CMOS technology MOSFET circuits Power MOSFET Power supplies Radio frequency Semiconductor thin films Silicon on insulator technology Thin film circuits Thin film devices Transistors |
title | Advanced SOI CMOS technology for RF applications |
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