Advanced SOI CMOS technology for RF applications

Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors f...

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Hauptverfasser: Demeus, L., Chen, J., Eggermont, J.-P., Gillon, R., Raskin, J.-P., Vanhoenacker, D., Flandre, D.
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creator Demeus, L.
Chen, J.
Eggermont, J.-P.
Gillon, R.
Raskin, J.-P.
Vanhoenacker, D.
Flandre, D.
description Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results.
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identifier ISBN: 9780780349001
ispartof 1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167), 1998, p.134-139
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects CMOS technology
MOSFET circuits
Power MOSFET
Power supplies
Radio frequency
Semiconductor thin films
Silicon on insulator technology
Thin film circuits
Thin film devices
Transistors
title Advanced SOI CMOS technology for RF applications
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