Advanced SOI CMOS technology for RF applications

Advanced SOI CMOS technology for RF applications

Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors f...

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Hauptverfasser: Demeus, L., Chen, J., Eggermont, J.-P., Gillon, R., Raskin, J.-P., Vanhoenacker, D., Flandre, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
MOSFET circuits
Power MOSFET
Power supplies
Radio frequency
Semiconductor thin films
Silicon on insulator technology
Thin film circuits
Thin film devices
Transistors
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Zusammenfassung:Thin film fully depleted silicon-on-insulator CMOS technology, devices and circuits for RF applications are presented. These submicron MOSFET transistors can achieve a maximum oscillation frequency of 30 GHz for a 1 V power supply. This kind of performance and the advantages of the SOI transistors fit the needs for low-voltage low-power RF applications. To demonstrate the capabilities of this technology we present a single stage OTA with a f/sub T/ of 1.1 GHz and /spl phi//sub M/ of 30/spl deg/, and two CMOS mixers with exceptional linearity results.
DOI:10.1109/ISSSE.1998.738053