Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

Improved near- and far-field distributions in broad area semiconductor lasers with enhanced current spreading

We have demonstrated a novel semiconductor laser design with enhanced lateral current spreading. This results in significantly improved near and far-field distributions when compared to a standard broad area laser with a similar FWHM near-field. The far-field at a total output power of 0.6 W is sing...

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Bibliographische Detailangaben
Hauptverfasser: O'Brien, P.A., Skovgaard, P.M.W., McInerney, J.G., Roberts, J.S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current distribution
Educational institutions
Laser modes
Power engineering and energy
Power generation
Power lasers
Quantum well lasers
Semiconductor lasers
Smoothing methods
Spatial coherence
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Beschreibung
Zusammenfassung:We have demonstrated a novel semiconductor laser design with enhanced lateral current spreading. This results in significantly improved near and far-field distributions when compared to a standard broad area laser with a similar FWHM near-field. The far-field at a total output power of 0.6 W is single lobed, symmetric, and less than 60 percent narrower than the standard device.
DOI:10.1109/LEOS.1998.737872