Bonding Pad Over Active Structure for Chip Shrinkage of High-Power AlGaN/GaN HFETs
This paper reports a bonding pad over active (BPOA) structure with photosensitive polyimide (PSPI) as the intermetal dielectric layer to reduce the chip size of high-power enhancement-mode AlGaN/GaN heterojunction FETs (HEFTs) on a 150-mm (6-in) Si substrate. The fabricated AlGaN/GaN HFETs with a BP...
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Veröffentlicht in: | IEEE transactions on electron devices 2016-02, Vol.63 (2), p.620-624 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This paper reports a bonding pad over active (BPOA) structure with photosensitive polyimide (PSPI) as the intermetal dielectric layer to reduce the chip size of high-power enhancement-mode AlGaN/GaN heterojunction FETs (HEFTs) on a 150-mm (6-in) Si substrate. The fabricated AlGaN/GaN HFETs with a BPOA structure exhibited a threshold voltage and a maximum current of 0.6 V and 38.6 A, respectively, at VGS of 6 V. The leakage current was 4.3 × 10-5 A at 700 V, which was the same value as that of the AlGaN/GaN HFETs without a BPOA structure. The reliability of the AlGaN/GaN HFETs with the BPOA structure during the packaging process was improved by the PSPI layer and a modified bonding pad structure, which endured the stress during the wedge wire bonding and epoxy molding processes. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2015.2509964 |