A simple approach to SEU cross section evaluation [semiconductor memories]
The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science 1998-12, Vol.45 (6), p.2884-2890 |
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| container_end_page | 2890 |
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| container_issue | 6 |
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| container_title | IEEE Transactions on Nuclear Science |
| container_volume | 45 |
| creator | Miroshkin, V.V. Tverskoy, M.G. |
| description | The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown. |
| doi_str_mv | 10.1109/23.736543 |
| format | Article |
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The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. 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The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown.</description><subject>CALCULATION METHODS</subject><subject>Data analysis</subject><subject>Energy measurement</subject><subject>ERRORS</subject><subject>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</subject><subject>Neutrons</subject><subject>Nuclear measurements</subject><subject>Nuclear physics</subject><subject>Parameter estimation</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>Predictive models</subject><subject>Projectiles</subject><subject>PROTONS</subject><subject>Semiconductor memory</subject><subject>SEMICONDUCTOR STORAGE DEVICES</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1LAzEQhoMoWKsHr57i0cPWfDbJsZT6RcGD9iQSkuyURrrNkmwF_71rt3iaGeZheOZF6JqSCaXE3DM-UXwqBT9BIyqlrqhU-hSNCKG6MsKYc3RRylc_CknkCL3McIlNuwXs2jYnFza4S_htscIhp1JwgdDFtMPw7bZ7d2g_CjQxpF29D13KuIEm5Qjl8xKdrd22wNWxjtHqYfE-f6qWr4_P89myCkyxrpJ-7SkFrkB4oxkEyWqpp72NEMIZH5zhErwWasqEYswz4mnNpNGOE8EpH6Pb4W4qXbQlxA7CpvfZ9aqWM24U6Zm7gTl8kWFt2xwbl38sJfYvKMu4HYLq2ZuBjQDwzx2XvwYkYfs</recordid><startdate>19981201</startdate><enddate>19981201</enddate><creator>Miroshkin, V.V.</creator><creator>Tverskoy, M.G.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19981201</creationdate><title>A simple approach to SEU cross section evaluation [semiconductor memories]</title><author>Miroshkin, V.V. ; Tverskoy, M.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c272t-5bfb11e37e4b982ec52d586505444a9bca935eb847624722b20b1d2598a304313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>CALCULATION METHODS</topic><topic>Data analysis</topic><topic>Energy measurement</topic><topic>ERRORS</topic><topic>INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS</topic><topic>Neutrons</topic><topic>Nuclear measurements</topic><topic>Nuclear physics</topic><topic>Parameter estimation</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>Predictive models</topic><topic>Projectiles</topic><topic>PROTONS</topic><topic>Semiconductor memory</topic><topic>SEMICONDUCTOR STORAGE DEVICES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miroshkin, V.V.</creatorcontrib><creatorcontrib>Tverskoy, M.G.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Miroshkin, V.V.</au><au>Tverskoy, M.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A simple approach to SEU cross section evaluation [semiconductor memories]</atitle><jtitle>IEEE Transactions on Nuclear Science</jtitle><stitle>TNS</stitle><date>1998-12-01</date><risdate>1998</risdate><volume>45</volume><issue>6</issue><spage>2884</spage><epage>2890</epage><pages>2884-2890</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The simplified method for determination of proton induced SEU cross section is presented. The method is based on results of the analysis of experimental SEU cross sections initiated by fast nucleons. The possibility of SEU cross section measurement at single proton energy for SEU rate prediction is shown.</abstract><cop>United States</cop><pub>IEEE</pub><doi>10.1109/23.736543</doi><tpages>7</tpages></addata></record> |
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| ispartof | IEEE Transactions on Nuclear Science, 1998-12, Vol.45 (6), p.2884-2890 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | CALCULATION METHODS Data analysis Energy measurement ERRORS INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Neutrons Nuclear measurements Nuclear physics Parameter estimation PHYSICAL RADIATION EFFECTS Predictive models Projectiles PROTONS Semiconductor memory SEMICONDUCTOR STORAGE DEVICES |
| title | A simple approach to SEU cross section evaluation [semiconductor memories] |
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